60 GHz Front-end Components for Broadband Wireless Communication in 130 nm CMOS Technology

Vasilis Kolios, Konstantinos Giannakidis, Grigorios Kalivas

Abstract


The over 5 GHz available spectral space allocated worldwide around the 60 GHz band, is very promising for very high data rate wireless local communications. In this article we present two front-end key components for a 60 GHz transceiver in 130 nm RF CMOS technology: a single balanced mixer with high Conversion Gain (CG), reduced Noise Figure (NF) and low power consumption, and an LC cross coupled Voltage Controlled Oscillator (VCO) with very good linearity, considering Vctrl, and very low Phase Noise (PN). In both circuits, are employed custom designed inductors and a balun structure for mixer in order to enhance their performance. The VCO’s inductor achieves an inductance of 198 pH and a quality factor (Q) of 30, at 30 GHz. The balun shows less than 1o phase imbalance (PI) and less than 0.2 dB Amplitude Imbalance (AI) from 57 to 66 GHz. The mixer shows a CG greater than 15 dB and a NF lower than 12 dB. In addition, the VCO achieves a PN lower than -106 dBc/Hz at 1MHz offset, and shows great linearity for the entire band. Both circuits are biased with a 1.2 V supply voltage and the total power consumption is about 10.6 mW for the mixer and 10.92 mW for the VCO.


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